الوصف
IGBT Modules 1200V 25A PIM
الحالية-جامع (Ic) (ماكس)
-
Collector- Emitter Voltage VCEO Max:
1600 V
Collector-Emitter Saturation Voltage:
2.55 V
Continuous Collector Current at 25 C:
45 A
Gate-Emitter Leakage Current:
300 nA
Pd - Power Dissipation:
230 W
Operating Temperature:
- 40 C to + 125 C
Mounting Style:
Chassis Mount