مكان المنشأ
Hong Kong S.A.R.
Type
Bipolar Junction Transistor
operating temperature
65C~150C
DC Collector/Base Gain hfe Min
15
DC Current Gain hFE Max
75
Gain Bandwidth Product fT
3 MHz
Emitter- Base Voltage VEBO
5 V
Collector- Emitter Voltage VCEO Max
100V